CatalogSend an RFQ
SQD40081EL_GE3
Vishay
场效应管, MOSFET, P沟é“, -40V, -50A, 175度 C, 71W;
RoHSCompliant
- Manufacturer
- Vishay
- Height
- 2.507mm
- Schedule B
- 8541290080
- Power Dissipation
- 71W
- Number of Channels
- 1
- Turn On Delay Time
- 13ns
- Turn Off Delay Time
- 103ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 7mΩ
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- -50A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- -40V
- Drain to Source Breakdown Voltage
- -40V