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SQD50N06-09L-GE3
Vishay · DPAK
Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- DPAK
- Mounting style
- Surface Mount
- Width
- 6.22mm
- Height
- 2.39mm
- Length
- 6.73mm
- Weight
- 1.437803g
- Fall Time
- 8ns
- Rise Time
- 11ns
- REACH SVHC
- Unknown
- Rds On Max
- 9mO
- Schedule B
- 8541290080
- Number of Pins
- 3
- Input Capacitance
- 3.065nF
- Power Dissipation
- 136W
Show 16 more specificationsShow fewer specifications
- Threshold Voltage
- 2V
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 10ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 27ns
- Element Configuration
- Single
- Max Power Dissipation
- 136W
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 7.1mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 50A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 60V
- Drain to Source Breakdown Voltage
- 60V
Common questions about SQD50N06-09L-GE3
- What is SQD50N06-09L-GE3?
- SQD50N06-09L-GE3 is Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, manufactured by Vishay.
- Who manufactures SQD50N06-09L-GE3?
- SQD50N06-09L-GE3 is manufactured by Vishay.
- What package does SQD50N06-09L-GE3 come in?
- SQD50N06-09L-GE3 comes in a DPAK package (Surface Mount).
- Is SQD50N06-09L-GE3 RoHS compliant?
- The RoHS status of SQD50N06-09L-GE3 is: Compliant.
- Where can I buy SQD50N06-09L-GE3?
- Send an RFQ to Makat and our AI agents source SQD50N06-09L-GE3 across the whole supplier network, with verified offers inside 48 hours.