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SQJ414EP-T1_GE3
Vishay
TrenchFET Power MOSFET Automotive N-Channel Single 30V VDS ±20V VGS 30A ID 175°C 8-Pin PowerPAK SOIC T/R
RoHSCompliant
- Manufacturer
- Vishay
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 45W
- Number of Channels
- 1
- Turn On Delay Time
- 11ns
- Turn Off Delay Time
- 21ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 9.8mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 30A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V