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SQJ860EP-T1_GE3
Vishay
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 48W
- Number of Channels
- 1
- Turn On Delay Time
- 10ns
- Turn Off Delay Time
- 30ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 5mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 60A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 40V
- Drain to Source Breakdown Voltage
- 40V
Common questions about SQJ860EP-T1_GE3
- What is SQJ860EP-T1_GE3?
- SQJ860EP-T1_GE3 is Automotive N-Channel 40 V (D-S) 175 °C MOSFET, manufactured by Vishay.
- Who manufactures SQJ860EP-T1_GE3?
- SQJ860EP-T1_GE3 is manufactured by Vishay.
- Is SQJ860EP-T1_GE3 RoHS compliant?
- The RoHS status of SQJ860EP-T1_GE3 is: Non-Compliant.
- Where can I buy SQJ860EP-T1_GE3?
- Send an RFQ to Makat and our AI agents source SQJ860EP-T1_GE3 across the whole supplier network, with verified offers inside 48 hours.