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SQJA02EP-T1_GE3
Vishay
VISHAY - SQJA02EP-T1_GE3 - MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 68W
- Number of Channels
- 1
- Turn On Delay Time
- 19ns
- Turn Off Delay Time
- 30ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 4mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 75A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 60V
- Drain to Source Breakdown Voltage
- 60V
Common questions about SQJA02EP-T1_GE3
- What is SQJA02EP-T1_GE3?
- SQJA02EP-T1_GE3 is VISHAY - SQJA02EP-T1_GE3 - MOSFET, AEC-Q101, N-CH, 60V, POWERPAK SO, manufactured by Vishay.
- Who manufactures SQJA02EP-T1_GE3?
- SQJA02EP-T1_GE3 is manufactured by Vishay.
- Is SQJA02EP-T1_GE3 RoHS compliant?
- The RoHS status of SQJA02EP-T1_GE3 is: Compliant.
- Where can I buy SQJA02EP-T1_GE3?
- Send an RFQ to Makat and our AI agents source SQJA02EP-T1_GE3 across the whole supplier network, with verified offers inside 48 hours.