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SQJA68EP-T1_GE3
Vishay
MOSFET, AEC-Q101, 100V, POWERPACK SO; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Comp
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 45W
- Number of Channels
- 1
- Turn On Delay Time
- 9ns
- Turn Off Delay Time
- 15ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 76.5mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 14A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 100V
- Drain to Source Breakdown Voltage
- 100V
Common questions about SQJA68EP-T1_GE3
- What is SQJA68EP-T1_GE3?
- SQJA68EP-T1_GE3 is MOSFET, AEC-Q101, 100V, POWERPACK SO; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Comp, manufactured by Vishay.
- Who manufactures SQJA68EP-T1_GE3?
- SQJA68EP-T1_GE3 is manufactured by Vishay.
- Is SQJA68EP-T1_GE3 RoHS compliant?
- The RoHS status of SQJA68EP-T1_GE3 is: Non-Compliant.
- Where can I buy SQJA68EP-T1_GE3?
- Send an RFQ to Makat and our AI agents source SQJA68EP-T1_GE3 across the whole supplier network, with verified offers inside 48 hours.