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SQJB80EP-T1_GE3
Vishay
Mosfet, Dual N-Ch, 80V, 30A, 175Deg C; Channel Type:n Channel; Drain Source Voltage Vds N Channel:80V; Drain Source Voltage Vds P Channel:80V; Continuous Drain Current Id N Channel:30A; Continuous Drain Current Id P C
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 1.267mm
- Schedule B
- 8541290080
- Power Dissipation
- 48W
- Number of Channels
- 2
- Turn On Delay Time
- 10ns
- Turn Off Delay Time
- 23ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 15.5mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 30A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 80V
- Drain to Source Breakdown Voltage
- 80V
Common questions about SQJB80EP-T1_GE3
- What is SQJB80EP-T1_GE3?
- SQJB80EP-T1_GE3 is Mosfet, Dual N-Ch, 80V, 30A, 175Deg C; Channel Type:n Channel; Drain Source Voltage Vds N Channel:80V; Drain Source Voltage Vds P Channel:80V; Continuous Drain Current Id N Channel:30A; Continuous Drain Current Id P C, manufactured by Vishay.
- Who manufactures SQJB80EP-T1_GE3?
- SQJB80EP-T1_GE3 is manufactured by Vishay.
- Is SQJB80EP-T1_GE3 RoHS compliant?
- The RoHS status of SQJB80EP-T1_GE3 is: Non-Compliant.
- Where can I buy SQJB80EP-T1_GE3?
- Send an RFQ to Makat and our AI agents source SQJB80EP-T1_GE3 across the whole supplier network, with verified offers inside 48 hours.