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SQJQ466E-T1_GE3
Vishay
ingle N-Channel 60 V 1.9 mOhm 150 W SMT Automotive Power Mosfet - PowerPAK 8x8L
RoHSNon-Compliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 2.03mm
- Power Dissipation
- 150W
- Number of Channels
- 1
- Turn On Delay Time
- 24ns
- Turn Off Delay Time
- 47ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 1.7mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 200A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 60V
- Drain to Source Breakdown Voltage
- 60V
Common questions about SQJQ466E-T1_GE3
- What is SQJQ466E-T1_GE3?
- SQJQ466E-T1_GE3 is ingle N-Channel 60 V 1.9 mOhm 150 W SMT Automotive Power Mosfet - PowerPAK 8x8L, manufactured by Vishay.
- Who manufactures SQJQ466E-T1_GE3?
- SQJQ466E-T1_GE3 is manufactured by Vishay.
- Is SQJQ466E-T1_GE3 RoHS compliant?
- The RoHS status of SQJQ466E-T1_GE3 is: Non-Compliant.
- Where can I buy SQJQ466E-T1_GE3?
- Send an RFQ to Makat and our AI agents source SQJQ466E-T1_GE3 across the whole supplier network, with verified offers inside 48 hours.