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Catalog

SQM47N10-24L-GE3

Vishay · TO-263

Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-263
Mounting style
Surface Mount
Weight
1.437803g
Fall Time
6ns
Rise Time
6ns
REACH SVHC
Unknown
Rds On Max
24mO
Nominal Vgs
2V
Number of Pins
3
Input Capacitance
3.62nF
Power Dissipation
136W
Threshold Voltage
2V
Number of Channels
1
Number of Elements
1
Show 11 more specifications
Turn On Delay Time
10ns
Radiation Hardening
No
Turn Off Delay Time
32ns
Element Configuration
Single
Max Power Dissipation
136W
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Drain to Source Resistance
24mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
47A
Drain to Source Voltage (Vdss)
100V

Common questions about SQM47N10-24L-GE3

What is SQM47N10-24L-GE3?
SQM47N10-24L-GE3 is Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, manufactured by Vishay.
Who manufactures SQM47N10-24L-GE3?
SQM47N10-24L-GE3 is manufactured by Vishay.
What package does SQM47N10-24L-GE3 come in?
SQM47N10-24L-GE3 comes in a TO-263 package (Surface Mount).
Is SQM47N10-24L-GE3 RoHS compliant?
The RoHS status of SQM47N10-24L-GE3 is: Compliant.
Where can I buy SQM47N10-24L-GE3?
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