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STD130N4F6AG
STMicroelectronics · TO-252 · Active
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
LifecycleActiveRoHSCompliant
- Manufacturer
- STMicroelectronics
- Package / case
- TO-252
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Rds On Max
- 3.6mO
- Input Capacitance
- 4.26nF
- Power Dissipation
- 143W
- Max Power Dissipation
- 143W
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.6mO
- Continuous Drain Current (ID)
- 80A
- Drain to Source Voltage (Vdss)
- 40V