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STGW35NB60SD
STMicroelectronics · TO-247 · Active
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
LifecycleActiveRoHSCompliant
- Manufacturer
- STMicroelectronics
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Package / case
- TO-247
- Mounting style
- Through Hole
- Width
- 5.15mm
- Height
- 20.15mm
- Length
- 15.75mm
- Lead Free
- Lead Free
- Rise Time
- 70ns
- REACH SVHC
- No
- Number of Pins
- 3
- Power Dissipation
- 200W
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Collector Current
- 70A
- Max Power Dissipation
- 200W
Show 6 more specificationsShow fewer specifications
- Reverse Recovery Time
- 44ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Collector Emitter Voltage (VCEO)
- 600V
- Collector Emitter Breakdown Voltage
- 600V
- Collector Emitter Saturation Voltage
- 1.7V
Common questions about STGW35NB60SD
- What is STGW35NB60SD?
- STGW35NB60SD is STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3, manufactured by STMicroelectronics.
- Who manufactures STGW35NB60SD?
- STGW35NB60SD is manufactured by STMicroelectronics.
- What package does STGW35NB60SD come in?
- STGW35NB60SD comes in a TO-247 package (Through Hole).
- Is STGW35NB60SD RoHS compliant?
- The RoHS status of STGW35NB60SD is: Compliant.
- Is STGW35NB60SD still in production?
- STGW35NB60SD has a lifecycle status of Active.
- Where can I buy STGW35NB60SD?
- Send an RFQ to Makat and our AI agents source STGW35NB60SD across the whole supplier network, with verified offers inside 48 hours.