CatalogSend an RFQ
STH320N4F6-6
STMicroelectronics · TO-263 · Active
Power Field-Effect Transistor, 200A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
LifecycleActiveRoHSCompliant
- Manufacturer
- STMicroelectronics
- Package / case
- TO-263
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Width
- 10.4mm
- Height
- 4.8mm
- Length
- 15.25mm
- Fall Time
- 95ns
- Rise Time
- 98ns
- Rds On Max
- 1.3mO
- Number of Pins
- 8
- Input Capacitance
- 13.8nF
- Power Dissipation
- 300W
- Number of Elements
- 1
- Turn On Delay Time
- 28ns
- Radiation Hardening
- No