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STI11NM80
STMicroelectronics · TO-262 · NRND
Trans MOSFET N-CH 800V 11A 3-Pin I2PAK Tube
LifecycleNRNDRoHSCompliant
- Manufacturer
- STMicroelectronics
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-262
- Mounting style
- Through Hole
- Fall Time
- 15ns
- Rise Time
- 17ns
- Rds On Max
- 400mO
- Number of Pins
- 3
- Input Capacitance
- 1.63nF
- Power Dissipation
- 150W
- Turn On Delay Time
- 22ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 46ns
- Max Power Dissipation
- 150W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
Show 5 more specificationsShow fewer specifications
- Drain to Source Resistance
- 400mO
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 11A
- Drain to Source Voltage (Vdss)
- 800V
- Drain to Source Breakdown Voltage
- 800V
Common questions about STI11NM80
- What is STI11NM80?
- STI11NM80 is Trans MOSFET N-CH 800V 11A 3-Pin I2PAK Tube, manufactured by STMicroelectronics.
- Who manufactures STI11NM80?
- STI11NM80 is manufactured by STMicroelectronics.
- What package does STI11NM80 come in?
- STI11NM80 comes in a TO-262 package (Through Hole).
- Is STI11NM80 RoHS compliant?
- The RoHS status of STI11NM80 is: Compliant.
- Is STI11NM80 still in production?
- STI11NM80 has a lifecycle status of NRND.
- Where can I buy STI11NM80?
- Send an RFQ to Makat and our AI agents source STI11NM80 across the whole supplier network, with verified offers inside 48 hours.