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STW57N65M5-4

STMicroelectronics · TO-247 · Active

Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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LifecycleActiveRoHSCompliant
Manufacturer
STMicroelectronics
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-247
Mounting style
Through Hole
Width
5.1mm
Height
21.1mm
Length
15.9mm
Fall Time
8ns
Lead Free
Lead Free
Rise Time
9ns
Rds On Max
63mO
Number of Pins
4
Input Capacitance
4.2nF
Turn On Delay Time
79ns
Radiation Hardening
No
Turn Off Delay Time
14ns
Show 9 more specifications
Element Configuration
Single
Max Power Dissipation
250W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
63mO
Gate to Source Voltage (Vgs)
25V
Continuous Drain Current (ID)
42A
Drain to Source Voltage (Vdss)
650V
Drain to Source Breakdown Voltage
650V

Common questions about STW57N65M5-4

What is STW57N65M5-4?
STW57N65M5-4 is Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, manufactured by STMicroelectronics.
Who manufactures STW57N65M5-4?
STW57N65M5-4 is manufactured by STMicroelectronics.
What package does STW57N65M5-4 come in?
STW57N65M5-4 comes in a TO-247 package (Through Hole).
Is STW57N65M5-4 RoHS compliant?
The RoHS status of STW57N65M5-4 is: Compliant.
Is STW57N65M5-4 still in production?
STW57N65M5-4 has a lifecycle status of Active.
Where can I buy STW57N65M5-4?
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