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TK100E10N1,S1X
Toshiba · TO-220
POWER MOSFET TRANSISTOR
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Height
- 19.95mm
- Rds On Max
- 3.4mO
- Schedule B
- 8541290080
- Number of Pins
- 3
- Input Capacitance
- 8.8nF
- Power Dissipation
- 255W
- Number of Channels
- 1
- Turn On Delay Time
- 59ns
- Turn Off Delay Time
- 140ns
- Max Power Dissipation
- 255W
- Max Operating Temperature
- 150°C
- Drain to Source Resistance
- 2.8mO
Show 5 more specificationsShow fewer specifications
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 100A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 100V
- Drain to Source Breakdown Voltage
- 100V
Common questions about TK100E10N1,S1X
- What is TK100E10N1,S1X?
- TK100E10N1,S1X is POWER MOSFET TRANSISTOR, manufactured by Toshiba.
- Who manufactures TK100E10N1,S1X?
- TK100E10N1,S1X is manufactured by Toshiba.
- What package does TK100E10N1,S1X come in?
- TK100E10N1,S1X comes in a TO-220 package (Through Hole).
- Is TK100E10N1,S1X RoHS compliant?
- The RoHS status of TK100E10N1,S1X is: Compliant.
- Where can I buy TK100E10N1,S1X?
- Send an RFQ to Makat and our AI agents source TK100E10N1,S1X across the whole supplier network, with verified offers inside 48 hours.