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Catalog

TK100E10N1,S1X

Toshiba · TO-220

POWER MOSFET TRANSISTOR

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RoHSCompliant
Manufacturer
Toshiba
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-220
Mounting style
Through Hole
Height
19.95mm
Rds On Max
3.4mO
Schedule B
8541290080
Number of Pins
3
Input Capacitance
8.8nF
Power Dissipation
255W
Number of Channels
1
Turn On Delay Time
59ns
Turn Off Delay Time
140ns
Max Power Dissipation
255W
Max Operating Temperature
150°C
Drain to Source Resistance
2.8mO
Show 5 more specifications
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
100A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
100V
Drain to Source Breakdown Voltage
100V

Common questions about TK100E10N1,S1X

What is TK100E10N1,S1X?
TK100E10N1,S1X is POWER MOSFET TRANSISTOR, manufactured by Toshiba.
Who manufactures TK100E10N1,S1X?
TK100E10N1,S1X is manufactured by Toshiba.
What package does TK100E10N1,S1X come in?
TK100E10N1,S1X comes in a TO-220 package (Through Hole).
Is TK100E10N1,S1X RoHS compliant?
The RoHS status of TK100E10N1,S1X is: Compliant.
Where can I buy TK100E10N1,S1X?
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