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TK10A60D(Q)
Toshiba
TOSHIBA Field Effect Transisstor Silicon N Channel MOS Type
RoHSCompliant
- Manufacturer
- Toshiba
- Mounting style
- Through Hole
- Fall Time
- 15ns
- Lead Free
- Lead Free
- Rise Time
- 22ns
- Number of Pins
- 3
- Power Dissipation
- 45W
- Number of Elements
- 1
- Radiation Hardening
- No
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 10A