CatalogSend an RFQ
TK65A10N1,S4X
Toshiba · TO-220
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220SIS Magazine
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Mounting style
- Through Hole
- Weight
- 6.000006g
- Fall Time
- 26ns
- Rise Time
- 19ns
- Rds On Max
- 4.8mΩ
- Schedule B
- 8541290080
- Number of Pins
- 3
- Input Capacitance
- 5.4nF
- Number of Channels
- 1
- Turn On Delay Time
- 44ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 85ns
- Element Configuration
- Single
Show 7 more specificationsShow fewer specifications
- Max Power Dissipation
- 45W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 4mΩ
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 65A
- Drain to Source Voltage (Vdss)
- 100V
Common questions about TK65A10N1,S4X
- What is TK65A10N1,S4X?
- TK65A10N1,S4X is Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220SIS Magazine, manufactured by Toshiba.
- Who manufactures TK65A10N1,S4X?
- TK65A10N1,S4X is manufactured by Toshiba.
- What package does TK65A10N1,S4X come in?
- TK65A10N1,S4X comes in a TO-220 package (Through Hole).
- Is TK65A10N1,S4X RoHS compliant?
- The RoHS status of TK65A10N1,S4X is: Compliant.
- Where can I buy TK65A10N1,S4X?
- Send an RFQ to Makat and our AI agents source TK65A10N1,S4X across the whole supplier network, with verified offers inside 48 hours.