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TN0610N3-G

Microchip · TO-92 · Active

TN0610 Series 100 V 500 mA N-Channel Enhancement-Mode Vertical DMOS FET -TO-92-3

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LifecycleActiveRoHSCompliant
Manufacturer
Microchip
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-92
Mounting style
Through Hole
Packaging
Bulk
Weight
453.59237mg
Fall Time
16ns
Rise Time
14ns
Rds On Max
1.5O
Schedule B
8541290080
Number of Pins
3
Contact Plating
Tin
Input Capacitance
150pF
Power Dissipation
1W
Number of Channels
1
Number of Elements
1
Show 12 more specifications
Turn On Delay Time
6ns
Radiation Hardening
No
Turn Off Delay Time
16ns
Element Configuration
Single
Max Power Dissipation
1W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
1.5O
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
100V
Drain to Source Breakdown Voltage
100V

Common questions about TN0610N3-G

What is TN0610N3-G?
TN0610N3-G is TN0610 Series 100 V 500 mA N-Channel Enhancement-Mode Vertical DMOS FET -TO-92-3, manufactured by Microchip.
Who manufactures TN0610N3-G?
TN0610N3-G is manufactured by Microchip.
What package does TN0610N3-G come in?
TN0610N3-G comes in a TO-92 package (Through Hole).
Is TN0610N3-G RoHS compliant?
The RoHS status of TN0610N3-G is: Compliant.
Is TN0610N3-G still in production?
TN0610N3-G has a lifecycle status of Active.
Where can I buy TN0610N3-G?
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